Differences between amorphous indium oxide thin films

inese Materials Res 16/j.pnsc.2013.08.00 : Department of Ma ity 2220 Campus SA Tel.: þ1 847 49 chang@northwester esponsibility of Chin Abstract A series of 60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm at þ50 1C to 5.3 g/cm at 100 1C.